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Charge transfer devices (Electronics)

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Filed under: Charge transfer devices (Electronics)

Two-phase charge-coupled device / (Washington : National Aeronautics and Space Administration, 1973), by W. F. Kosonocky, J. E. Carnes, Radio Corporation of America, and United States National Aeronautics and Space Administration (page images at HathiTrust; US access only)
Impact of charge-transfer device technology on computer systems / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1977), by Robert B. J. Warnar, United States. National Bureau of Standards. Special publication, and Institute for Computer Sciences and Technology (page images at HathiTrust)

Items below (if any) are from related and broader terms.

Filed under: Delay lines

Storage of analog variables in delay lines, (Urbana, 1968), by Lawrence H. Wallman (page images at HathiTrust)
100-channel pulse height analyzer using delay line storage / ([Los Alamos, N.M.] : Los Alamos Scientific Laboratory of the University of California, 1955), by J. D. Gallagher, H. J. Lang, J. L. McKibben, Los Alamos Scientific Laboratory, and U.S. Atomic Energy Commission (page images at HathiTrust)
Model 100 delay line shaper / (Oak Ridge, Tenn. : Manhattan District, 1946), by N. D. Bradbury, U.S. Atomic Energy Commission, and Los Alamos National Laboratory (page images at HathiTrust)
Note on a use of delay lines in counter pulse amplifiers / (Oak Ridge, Tenn. : Atomic Energy Commission, 1946), by O. R. Frisch, U. R. Friend, U.S. Atomic Energy Commission, and Company. Division (page images at HathiTrust)
100-channel pulse height analyzer using delay line storage / (Oak Ridge, Tenn. : U.S. Atomic Energy Commission, Technical Information Service, 1955), by J. D. Gallagher, H. J. Lang, J. L. McKibben, Los Alamos Scientific Laboratory, and U.S. Atomic Energy Commission (page images at HathiTrust)
UHF and microwave frequency acoustic surface wave delay lines : design /, by Andrew J. Slobodnik and sponsor Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)

Filed under: Semiconductors

Materials for High-Temperature Semiconductor Devices (1995), by National Research Council National Materials Advisory Board (page images with commentary at NAP)
Fundamentals of Transistor Physics (New York: J. F. Rider; London: Chapman and Hall, c1960), by Irving M. Gottlieb (PDF at worldradiohistory.com)
Semiconductors and Transistors (New York: J. F. Rider, c1951), ed. by Alexander Schure (PDF at worldradiohistory.com)
Josephson junctions : citations from the NTIS data base : search period covered 1964-August 1978 / (Springfield, Va. : U. S. Dept. of Commerce, National Technical Information Service, 1978), by George William Reimherr and United States. National Technical Information Service (page images at HathiTrust)
CBS electron tubes and semiconductors, engineer's handbook. (Danvers, Mass. : CBS-Hytron, 1957-) (page images at HathiTrust; US access only)
Current industrial reports. (Washington, D.C. : The Bureau : For sale by the Supt. of Docs., U.S. G.P.O., 1986-), by United States Bureau of the Census (page images at HathiTrust)
Competitiveness of the U.S. semiconductor industry : hearing before the Subcommittee on Commerce, Consumer Protection, and Competitiveness of the Committee on Energy and Commerce, House of Representatives, One Hundredth Congress, first session, June 9, 1987. (Washington : U.S. G.P.O. : For sale by the Supt. of Docs., Congressional Sales Office, U.S. G.P.O., 1988), by Consumer Protection United States. Congress. House. Committee on Energy and Commerce. Subcommittee on Commerce (page images at HathiTrust)
Renewal of the United States-Japan semiconductor agreement : hearing before the Subcommittee on International Trade of the Committee on Finance, United States Senate, One Hundred Second Congress, first session, March 22, 1991. (Washington : U.S. G.P.O. : For sale by the Supt. of Congressional Sales Office, U.S. G.P.O., 1991), by United States. Congress. Senate. Committee on Finance. Subcommittee on International Trade (page images at HathiTrust)
A Competitive assessment of the U.S. semiconductor manufacturing equipment industry / (Washington, D.C. : U.S. Dept. of Commerce, International Trade Administration, [1985]), by United States. Trade Development. Science and Electronics (page images at HathiTrust)
The Semiconductor Chip Protection Act of 1983 : hearing before the Subcommittee on Patents, Copyrights, and Trademarks of the Committee on the Judiciary, United States Senate, Ninety-eighth Congress, first session, on S. 1201 ... May 19, 1983. (Washington : U.S. G.P.O., 1984), by Copyrights United States. Congress. Senate. Committee on the Judiciary. Subcommittee on Patents (page images at HathiTrust)
Measurement techniques for high power semiconductor materials and devices : annual report / (Washington, D.C. : The Division ; [Springfield, Va.] : [National Technical Information Service, distributor]), by Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division, Center for Electronics and Electrical Engineering (U.S.). Semiconductor Materials and Processes Division, and United States. Division of Electric Energy Systems (page images at HathiTrust)
Superior photoengraving process for semiconductor devices, ([Washington, National Aeronautics and Space Administration]; for sale by the Clearinghouse for Federal Scientific and Technical Information, Springfield, Va., [1966]), by Charles Jackson Taylor, Goddard Space Flight Center, and Westinghouse Electric Corporation (page images at HathiTrust)
Epitaxial growth of 6H silicon carbide in the temperature range 1320 ̊to 1390 ̊C / (Washington, D.C. : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service], 1974), by Herbert A. Will, J. Anthony Powell, and Lewis Research Center (page images at HathiTrust)
Methods of measurement for semiconductor materials, process control, and devices : quarterly report, October 1 to December 31, 1971 / (Washington : U.S. Dept. of Commerce, National Bureau of Standards, 1971), by W. Murray Bullis (page images at HathiTrust)
Radiation damage to semiconductors by high-energy electron and proton radiation / (Washington : National Aeronautics and Space Administration : Springfield, Va. : for sale by the National Technical Information Service, 1964), by John C. Corelli, H. B. Huntington, Rensselaer Polytechnic Institute, and United States National Aeronautics and Space Administration (page images at HathiTrust)
Automated data collection system applied to Hall effect and resistivity measurements / (Washington, D.C. : National Aeronautics and Space Administration ; Springfield, Va. : For sale by the Clearinghouse for Federal Scientific and Technical Information [distributor], 1967), by Ralph D. Thomas and Lewis Research Center (page images at HathiTrust)
Proton damage in semiconductor devices / (Washington : National Aeronautics and Space Administration : Springfield, Va. : for sale by the National Technical Information Service, 1964), by D. M. Arnold, United States National Aeronautics and Space Administration, and Radio Corporation of America (page images at HathiTrust)
Proton-radiation damage in Gunn oscillators / (Washington, D.C. : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service], 1973), by James W. Johnson, Carl L. Fales, and Langley Research Center (page images at HathiTrust)
Imports under items 806.30 and 807.00 of the Tariff schedules of the United States, 1982-85 : report on investigation no. 332-237, under section 332(b) of the Tariff Act of 1930. (Washington, DC : U.S. International Trade Commission, [1986]), by United States International Trade Commission (page images at HathiTrust)
Design of the program-controlled semiconductor and printed circuit board test console / (Urbana, Illinois : University of Illinois, 1963), by Shigeharu Yamada, University of Illinois at Urbana-Champaign. Department of Computer Science. Report, and University of Illinois at Urbana-Champaign. Graduate College. Digital Computer Laboratory (page images at HathiTrust)
Energy savings potential of solid-state lighting in general illumination applications : final report / ([Washington, DC] : Lighting Research and Development, Building Technologies Program, Office of Energy Efficiency and Renewable Energy, U.S. Department of Energy , 2006), by United States. Department of Energy. Office of Energy Efficiency and Renewable Energy. Building Technologies Program. Lighting Research and Development and Navigant Consulting (page images at HathiTrust)
Semiconductor measurement technology. ([Gaithersburg, Md.?] : U.S. Dept. of Commerce, National Bureau of Standards,), by United States. National Bureau of Standards (page images at HathiTrust)
Electron tubes and semiconductors : production : consumption : trade : selected foreign countries., by United States. Business and Defense Services Administration. Electronics Division and Ruth L. Cannon (page images at HathiTrust)
Semiconductors : U.S. production and trade., by United States. Business and Defense Services Administration. Electronics Division (page images at HathiTrust)
Methods of measurement for semiconductor materials, process control, and devices : quarterly report, July, 1 - Sept. 30, 1971 /, by W. Murray Bullis (page images at HathiTrust)
Marking the country of origin on semiconductors. ([Washington, D.C. : U.S. Customs Service], [1992?]), by U.S. Customs Service (page images at HathiTrust)
Semiconductor. (Gaithersburg, MD : U.S. Dept. of Commerce, National Institute of Standards and Technology, Standard Reference Materials, [1994]), by National Measurement Laboratory (U.S.). Office of Standards Referencee Materials (page images at HathiTrust)
The federal research policy for semiconductors : hearing before the Subcommittee on Science, Research, and Technology of the Committee on Science, Space, and Technology, U.S. House of Representatives, One Hundred First Congress, second session, March 29, 1990. (Washington : U.S. G.P.O. : For sale by the Supt. of Docs., Congressional Sales Office, U.S. G.P.O., 1990), by Space United States. Congress. House. Committee on Science (page images at HathiTrust)
Semiconductor measurement technology : results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon / (Gaithersburg, MD : U.S. Dept. of Commerce, National Bureau of Standards ; Washington, DC : For sale by the Supt. of Docs., U.S. G.P.O., 1987), by John Albers and United States. National Bureau of Standards (page images at HathiTrust)
Fundamentals of transistor physics. (New York, J. F. Rider, [1960]), by Irving M. Gottlieb (page images at HathiTrust)
Semiconductor measurement technology, April 1, 1977 to September 30, 1977 / ([Washington] : U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1980), by W. Murray Bullis (page images at HathiTrust; US access only)
Heterostructure single crystal silicon photovoltaic cell, extension : Type A, semiconductor heterojunction silicon devices. ([Washington] : Dept. of Energy ; Springfield, Va. : for sale by the National Technical Information Service, 1979-), by Exxon Research and Engineering Company. Government Research Laboratories, Charles Fishman, Tom Feng, Amal K. Ghosh, United States. Department of Energy, and United States. Energy Research and Development Administration. Division of Solar Energy (page images at HathiTrust)
Metallic rectifiers and crystal diodes. (New York : Rider, [1958]), by Theodore Conti (page images at HathiTrust; US access only)
An investigation of semiconductors by optical methods / (Washington : Catholic University of America Press, 1955), by Edward Eugene Gardner (page images at HathiTrust; US access only)
Theory of noise in a multidimensional semiconductor with a p-n junction. (Washington, Catholic University of America Press, 1957), by Max Solow (page images at HathiTrust; US access only)
Electron tubes and semiconductors : production, consumption, trade : selected Latin American countries. ([Washington, D.C. : U.S. Dept. of Commerce, Business and Defense Services Administration : For sale by Supt. of Docs., U.S. GPO, [1960]), by United States. Business and Defense Services Administration (page images at HathiTrust)
Solid state technology; a compilation. (Washington, National Aeronautics and Space Administration; [for sale by the National Technical Information Service, Springfield, Va., 1973-), by United States. National Aeronautics and Space Administration. Technology Utilization Office (page images at HathiTrust)
Semiconductor / ([Gaithersburg, Md.?] : The Institute, [1994]), by National Institute of Standards and Technology (U.S.) (page images at HathiTrust)
Electron tubes and semiconductors; production, consumption, trade. ([Washington, 1960]), by United States. Business and Defense Services Administration (page images at HathiTrust)
Semiconductor detectors in medicine, March 8-9, 1973, presented by Nuclear Medicine Division, Department of Radiology, University of California School of Medicine and Continuing Education in Health Sciences, University of California, San Francisco, California, supported in part by KeVex Corporation, Burlingame, California [et al. (Oak Ridge, Tenn.] U. S. Atomic Energy Commission, Office of Information Services, Technical Information Center; [available from the National Technical Information Service, U. S. Dept. of Commerce, Springfield, Va.], 1973), by San Francisco. Nuclear Medicine Division University of California and San Francisco. Continuing Education in Health Sciences University of California (page images at HathiTrust)
Silicon detectors for high energy physics : proceedings of a workshop held at Fermilab, October 15-16, 1981 / ([Washington : U.S. G.P.O., 1982]), by Thomas Ferbel, University of Rochester, Fermi National Accelerator Laboratory, and United States. Dept. of Energy (page images at HathiTrust; US access only)
Spreading resistance analysis for silicon layers with nonuniform resistivity : David H. Dickey and James R. Ehrstein. (Washington, D.C. : U.S. Dept. of Commerce, 1979), by David H. Dickey and James R. Ehrestein (page images at HathiTrust; US access only)
Phonon instabilities and structural transformations of group IV semiconductors / (1984), by Rana Biswas (page images at HathiTrust)
Semiconductor measurement technology : microelectronic ultrasonic bonding / ([Washington] : U.S. Dept. of Commerce, National Bureau of Standards; [for sale by the Supt. of Docs, U.S. Govt. Print. Off.] 1974.), by George G. Harman and United States. National Bureau of Standards (page images at HathiTrust)
Semiconductor measurement technology quarterly report, July 1 to September 30, 1973. / (Washington : National Bureau of Standards ; for sale by the Supt. of Docs., U.S. Govt. Print Off., 1974), by W. Murray Bullis, United States. Defense Nuclear Agency, United States Defense Advanced Research Projects Agency, and United States. National Bureau of Standards (page images at HathiTrust)
Semiconductor / (Gaithersburg, Md. : The Institute, [1990]), by National Institute of Standards and Technology (U.S.) (page images at HathiTrust)
Semiconductor photoelectrochemistry / (Washington, D.C. : National Aeronautics and Space Administration, Scientific and Technical Information Branch ; [Springfield, Va. : For sale by the National Technical Information Service], 1983), by A. Martin Buoncristiani, Charles E. Byvik, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch (page images at HathiTrust)
Simplified theory and transducer potentialities of the "pinch effect" in semiconductors / (Washington, D.C. : National Aeronautics and Space Administration ; Springfield, Va. : For sale by the Clearinghouse for Federal Scientific and Technical Information, [1969]), by Ernest E. Pittelli, Wilhelm Rindner, and Electronics Research Center (U.S.) (page images at HathiTrust)
Proton bombardment of high-purity single-crystal silicon / (Washington, D. C. : National Aeronautics and Space Administration ; Springfield, Va. : for sale by the Clearinghouse for Federal Scientific and Technical Information, 1967), by J. B. Robertson, T. E. Gilmer, R. K. Franks, Langley Research Center, and United States National Aeronautics and Space Administration (page images at HathiTrust)
Summary of trade and tariff information : prepared in terms of the tariff schedules of the United States : semiconductors : TSUS items 687.70-687.77, 687.81, 687.85-687.89. (Washington, D.C. : U.S. International Trade Commission, [1984]-), by Nelson J. Hogge and United States International Trade Commission (page images at HathiTrust)
Imports under items 806.30 and 807.00 of the Tariff schedules of the United States, 1979-82. (Washington, D.C. : U.S. International Trade Commission, 1984), by Ruben Moller, Nancy Paris, Cynthia Wilson, and United States International Trade Commission (page images at HathiTrust)
Probable economic effect of providing duty-free treatment for U.S. imports of certain high technology products : report to the President on investigation no. TA-131(b)-9 under section 131(b) of the Trade Act of 1974. (Washington, DC : U.S. International Trade Commission, [1985]), by United States International Trade Commission (page images at HathiTrust)
Methods of measurement for semiconductor materials, process control, and devices. Quarterly report, July 1 to Sept. 30, 1968. (Washington, D.C., Supt. of Docs., G.P.O., 1968), by United States. National Bureau of Standards and W. Murray Bullis (page images at HathiTrust)
Dynamic random access memory semiconductors of 256 kilobits and above from Japan : determination of the Commission in investigation no. 731-TA-300(preliminary) under the Tariff act of 1930, together with the information obtained in the investigation. (Washington, D.C. : U.S. International Trade Commission, 1986), by United States International Trade Commission, Howard Gooley, Ilene Hersher, and Nelson Hogge (page images at HathiTrust)
Methods of measurement for semicaonductor materials, process control, and devices : quarterly report, January 1 to March 31, 1970 / (Washington, D.C. : U.S. National Bureau of Standards; for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1970), by Institute for Applied Technology (U.S.) Electronic Technology Division, A. J. Baroody, and W. Murray Bullis (page images at HathiTrust)
A simple model of space radiation damage in GaAs solar cells / (Washington, D.C. : National Aeronautics and Space Administration, Scientific and Technical Information Branch ; [Springfield, Va. : For sale by the National Technical Information Service], 1983), by John W. Wilson, L. V. Stock, John J. Stith, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch (page images at HathiTrust)
Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals / (Washington, D.C. : National Aeronautics and Space Administration, Scientific and Technical Information Branch ; Springfield, Va. : For sale by the National Technical Information Service, 1984), by Hiroshi Mishina, Donald H. Buckley, and Lewis Research Center (page images at HathiTrust)
Effect of mechanical strain on p-n junctions / (Washington, DC : National Aeronautics and Space Administration ; Springfield, VA : for sale by the Clearinghouse for Federal Scientific and Technical Information, 1965), by Jimmie J. Wortman and United States National Aeronautics and Space Administration (page images at HathiTrust)
Adhesion and friction of iron and gold in contact with elemental semiconductors / (Washington : National Aeronautics and Space Administration ; Springfield, Va. : For sale by the National Technical Information Service, 1977), by Donald H. Buckley, William A. Brainard, and United States National Aeronautics and Space Administration (page images at HathiTrust)
Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons / (Washington, D.C. : National Aeronautics and Space Administration ; Springfield, Va. : For sale by the Clearinghouse for Federal Scientific and Technical Information, [1969]), by Marvin E. Beatty (page images at HathiTrust)
Solution of the potential in a semiconductor with exponentially depth dependent conductivity and application to four-point-probe measurements / (Washington, D.C. : National Aeronautics and Space Administration : [For sale by the Clearinghouse for Federal Scientific and Technical, Springfield, Virginia 22151], 1971), by R. K. Franks, J. B. Robertson, Langley Research Center, and United States National Aeronautics and Space Administration (page images at HathiTrust)
Low-temperature solid-state phase transformations in 2H silicon carbide / (Washington, D.C. : National Aeronautics and Space Administration : [For sale by the Clearinghouse for Federal Scientific and Technical Information, Springfield, Virginia 22151], 1972), by Herbert A. Will, J. Anthony Powell, Lewis Research Center, and United States National Aeronautics and Space Administration (page images at HathiTrust)
An introduction to semiconductor electronics (New York, McGraw-Hill, [1963]), by Rajendra P Nanavati (page images at HathiTrust)
ARPA/NBS workshop II : hermeticity testing for integrated circuits / (Washington, D.C. : National Bureau of Standards, U.S. Dept. of Commerce, 1974), by Harry A. Schafft and United States. Advanced Research Projects Agency (page images at HathiTrust; US access only)
Om tryckets inflytande på det elektriska ledningsmotståndet hos selen och svavelsilver : akademisk avhandling / (Uppsala : Almqvist & Wiksells Boktryckeri, 1909), by Fritz Gustav Albrecht Montén (page images at HathiTrust; US access only)
Development of fault current controller technology : prototyping, laboratory testing, and field demonstration : final project report /, by Alexander Abramovitz, Keyue Smedley, Irvine University of California, and issuing body California Energy Commission. Energy Research and Development Division (page images at HathiTrust)
Laboratory manual to accompany the textbook Fundamentals of semiconductor and tube electronics / (New York : Wiley, c1962), by H. Alex Romanowitz (page images at HathiTrust; US access only)
Proton-produced defects in n-type silicon / (Washington, D.C. : National Aeronautics and Space Administration : For sale by the Clearinghouse for Federal Scientific and Technical Information, Springfield, Va., 1968), by Roger Allen Breckenridge and United States National Aeronautics and Space Administration (page images at HathiTrust; US access only)
Radiation polymerization of acetylene derivatives : final report / (Dayton, Ohio : Monsanto Research Corp., Dayton Laboratory, 1962), by Mark Elias Gutzke, W. M. Yanko, and Monsanto Research Corporation (page images at HathiTrust; US access only)
Electron tubes and semiconductors. (Englewood Cliffs, N.J. : Prentice-Hall, 1958), by J. J. De France (page images at HathiTrust)
Defects in PN junctions and MOS capacitors observed using thermally stimulated current and capacitance measurements, videotape script / (Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1976), by Martin G. Buehler (page images at HathiTrust)
Tabulation of published data on electron devices of the U.S.S.R. through March 1970 / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards, 1970), by Charles P. Marsden, Institute for Applied Technology (U.S.). Electronic Technology Division, and United States. National Bureau of Standards. Technical note (page images at HathiTrust)
Spreading resistance analysis for silicon layers with nonuniform resistivity / (Washington : Dept. of Commerce, [Office of Science and Technology], National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979), by David H. Dickey, James R. Ehrstein, United States Defense Advanced Research Projects Agency, Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division, and Solecon Laboratories (page images at HathiTrust)
Fundamentals of modern semiconductors / (Indianapolis : H.W. Sams, 1962), by Barron Kemp and R.H. McDonald (page images at HathiTrust)
Calculations for comparing two-point and four-point probe resistivity measurements on rectangular bar-shaped semiconductor samples. (Washington, [U.S. Dept. of Commerce, National Bureau of Standards]; for sale by the Supt. of Docs., Govt. Print. Off., 1964), by Lydon J. Swartzendruber (page images at HathiTrust)
NBS/DOE Workshop, Stability of (Thin Film) Solar Cells and Materials / (Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979), by Md.) Workshop on the Stability of (Thin Film) Solar Cells and Materials (1978 : Gaithersburg, Harry A. Schafft, David E. Sawyer, United States. Dept. of Energy. Advanced Materials R & D Branch, and Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division (page images at HathiTrust)
Microelectronic processing laboratory at NBS / (Washington : .U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1978), by T. F. Leedy and Y. M. Liu (page images at HathiTrust)
A 25-kV bias-isolation unit for 1-MHz capacitance and conductance measurements / (Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1977), by Alvin M. Goodman (page images at HathiTrust)
Spreading Resistance Symposium : proceedings of a symposium, held at the National Bureau of Standards, Gaithersburg, Md., June 13-14, 1974 / (Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1974), by Md.) Spreading Resistance Symposium (1974 : Gaithersburg, James R. Ehrstein, United States. National Bureau of Standards, and American Society for Testing and Materials. Committee F-1 on Materials for Electron Devices and Microelectronics (page images at HathiTrust)
Semiconductor measurement technology : quarterly report, April 1 to June 30, 1974. ([Washington] : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1975), by United States. National Bureau of Standards and W. Murray Bullis (page images at HathiTrust)
A general survey of the semiconductor field / ([Washington, D.C.] : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1962), by George William Reimherr and United States. National Bureau of Standards (page images at HathiTrust)
Report on the effect of nuclear radiation on semiconductor materials (first addendum) to Directorate of Nuclear Systems, Air Research and Development Command. (Columbus, Ohio, Radiation Effects Information Center, Battelle Memorial Institute; [distributed by U.S. Dept. of Commerce, Office of Technical Services], 1959), by L W Aukerman and United States. Air Force. Air Research and Development Command. Directorate of Nuclear Systems (page images at HathiTrust)
Semiconductor-diode parametric amplifiers (Englewood Cliffs, N.J., Prentice-Hall, 1961), by Lawrence A. Blackwell and Kenneth L. Kotzebue (page images at HathiTrust)
Semiconductor measurement technology : progress report, October 1 to December 31, 1974 / (Washington : U.S. Dept. of Commerce, National Bureau of Standards ; for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1975), by W. Murray Bullis and United States. National Bureau of Standards (page images at HathiTrust)
Semiconductor measurement technology combined quarterly report, October 1, 1973, to March 31, 1974 / ([Washington] : The Bureau : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1974), by W. Murray Bullis, United States Defense Advanced Research Projects Agency, United States. Defense Nuclear Agency, and United States. National Bureau of Standards (page images at HathiTrust)
Semiconductor devices. (New York : Technical Division, Holt, Rinehart and Winston, 1961), by Rufus P. Turner (page images at HathiTrust)
The effect of nuclear radiation on semiconductor devices; report to Air Research and Development Command, Wright Air Development Division. (Columbus, Ohio, Radiation Effects Information Center, Battelle Memorial Institute, [distributed by U.S. Dept. of Commerce, Office of Technical Services, Washington], 1960;), by F J Reid and United States. Wright Air Development Division (page images at HathiTrust)
Semiconductor measurement technology : progress report, July 1 to December 31, 1975 / ([Washington] : U.S. Dept. of Commerce, National Bureau of Standards, 1976), by United States. National Bureau of Standards and W. Murray Bullis (page images at HathiTrust)
The semiconductor industry : a survey of structure, conduct, and performance, staff report to the Federal Trade Commission. ([Washington : Bureau of Economics, The Commission : for sale by the Supt. of Docs., U.S. Govt. Print. Off.], 1977), by Douglas W Webbink and United States Federal Trade Commission (page images at HathiTrust)
Experiments in semiconductor application and design (New York, John Wiley, [c1963]), by Clyde N. Herrick and Melchior S. Estrada (page images at HathiTrust)
Correction factor tables for four-point probe resistivity measurements on thin, circular semiconductor samples (Washington, D. C. : U.S. Dept. of Commerce, National Bureau of Standards ; U.S. Govt. Print. Off., 1964), by Lydon J. Swartzendruber and United States. National Bureau of Standards (page images at HathiTrust; US access only)
Semiconductor measurement technology October 1, 1976 to March 31, 1977 / ([Washington, D.C.] : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979), by United States. National Bureau of Standards, W. Murray Bullis, and United States. National Bureau of Standards. Special publication (page images at HathiTrust)
Notes on SEM examination of microelectronic devices / (Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Doc., U.S. Govt. Print. Off., 1977), by John R. Devaney, W. J. Keery, and Kathryn O. Leedy (page images at HathiTrust)
Research on new high-temperature semiconducting materials (Wright-Patterson Air Force Base, Ohio, Aeronautical Research Laboratories, Air Force Research Division, Air Research and Development Command, U.S. Air Force, 1960; [distributed by U.S. Dept. of Commerce, Office of Technical Services, Washington]), by Shaun S. Devlin and Clevite Corporation (page images at HathiTrust)
Semiconductor measurement technology / ([Gaithersburg, Md.?] : The Institute,), by National Institute of Standards and Technology (U.S.) (page images at HathiTrust)
The physical theory of transistors. (New York, McGraw-Hill, 1961), by Leopoldo B. Valdes (page images at HathiTrust)
Introduction to integrated semi-conductor circuits. (New York, Wiley, [1963]), by Adi J. Khambata (page images at HathiTrust)
ARPA/NBS workshop IV : surface analysis for silicon devices / (Washington : U.S. Dept. of Commerce, National Bureau of Standards : [For sale by the Supt. of Docs., Govt. Print. Off.], 1976), by A. George Lieberman and United States. National Bureau of Standards (page images at HathiTrust)
Semiconductor measurement technology : quarterly report, July 1 to September 30, 1974 / (Washington, D.C. : National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Office, 1975), by W. Murray Bullis, United States. Navy Strategic Systems Projects Office, United States Defense Advanced Research Projects Agency, United States. Defense Nuclear Agency, and United States. National Bureau of Standards (page images at HathiTrust)
Tabulation of data on semiconductor amplifiers and oscilators at microwave frequencies [by] Charles P. Marsden and Rita Y. Cowan. ([Washington] U.S. National Bureau of Standards; for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1970), by Charles P. Marsden and Rita Y. Cowan (page images at HathiTrust)
A bibliography on methods for the measurement of inhomogeneities in semiconductors (1953-1967) / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards, 1968), by Harry A. Schafft, Susan Gayle Needham, Institute for Applied Technology (U.S.). Electronic Instrumentation Division, and United States. National Bureau of Standards. Technical note (page images at HathiTrust)
Carrier lifetime measurement by the photoconductive decay method / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1972), by Richard L. Mattis, A. James Baroody, and United States. National Bureau of Standards (page images at HathiTrust)
Industrial transistor & semiconductor handbook. (Indianapolis, H. W. Sams, [1961]), by Robert B. Tomer (page images at HathiTrust)
Industry's most modern electronic components from the world's largest semiconductor plant. ([Dallas, 1959]), by inc. Semiconductor Components Division Texas Instruments (page images at HathiTrust)
National Semiconductor Metrology Program : [catalog] / (Gaithersburg, MD : U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1995-), by National Institute of Standards and Technology (U.S.), National Semiconductor Metrology Program (U.S.), Electronics and Electrical Engineering Laboratory (National Institute of Standards and Technology), and National Institute of Standards and Technology (U.S.). Office of Microelectronics Programs (page images at HathiTrust)
Waste reduction activities and options for a manufacturer of systems to produce semiconductors / (Cincinnati, OH : U.S. Environmental Protection Agency, Risk Reduction Engineering Laboratory, [1992]), by Alan Ulbrecht, Daniel J. Watts, and Risk Reduction Engineering Laboratory (U.S.) (page images at HathiTrust)
An automated photovoltaic system for the measurement of resistivity variations in high-resistivity circular silicon slices / (Washington : Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979), by David L. Blackburn, United States. Division of Electric Energy Systems, and Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division (page images at HathiTrust)
Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon / ([Washington] : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1976), by Martin G. Buehler (page images at HathiTrust)
Tabulation of published data on electron devices of the U.S.S.R. through December 1973 / (Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1974), by Charles P. Marsden (page images at HathiTrust)
Copyright protection for imprinted design patterns on semiconductor chips : hearing before the Subcommittee on Courts, Civil Liberties, and the Administration of Justice of the Committee on the Judiciary, House of Representatives, Ninety-sixth Congress, first session, on H.R. 1007 ... April 16, 1979. (Washington : U.S. Govt. Print. Off. : [For sale by the Supt. of Docs., U.S. G.P.O., Congressional Sales Office], 1979), by Civil Liberties United States. Congress. House. Committee on the Judiciary. Subcommittee on Courts (page images at HathiTrust)
Measurement of carrier lifetime in semiconductors : an annotated bibliography covering the period 1949-1967 / (Washington, D.C. : U.S. National Bureau of Standards; for sale by the Supt of Docs., U.S. Govt. Print. Off., 1968), by W. Murray Bullis and United States. National Bureau of Standards (page images at HathiTrust)
ARPA/NBS workshop I: measurement problems in integrated circuit processing and assembly ([Washington] U.S. National Bureau of Standards; [for sale by the Supt. of Docs., U.S. Govt. Print. Off.], 1974), by Harry A. Schafft (page images at HathiTrust)
Planar test structures for characterizing impurities in silicon / (Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1976), by Martin G. Buehler (page images at HathiTrust)
Nondestructive tests used to insure the integrity of semiconductor devices with emphasis on acoustic emission techniques / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979), by George G. Harman and United States Defense Advanced Research Projects Agency (page images at HathiTrust)
Semiconductor measurement technology : progress report, July 1 to September 30, 1976 / ([Washington] : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1978), by United States. National Bureau of Standards, J. Franklin Mayo-Wells, and W. Murray Bullis (page images at HathiTrust)
Semiconductors and transistors. (New York : McGraw-Hill, 1959), by Douglas M. Warschauer (page images at HathiTrust)
Vacuum-tube and semiconductor electronics. (New York : McGraw-Hill, 1958), by Jacob Millman (page images at HathiTrust)
Industrial technology [microform] : hearing before the Committee on Commerce, Science, and Transportation, United States Senate, Ninety-fifth Congress, second session, on governmental policy and innovation in the semiconductor and computer industries ... October 30, 1978. (Washington : U.S. Govt. Print. Off., 1978 [i.e. 1979]), by United States Senate Committee on Commerce, Science, and Transportation (page images at HathiTrust)
Measurement methods for the semiconductor device industry - a summary of NBS activity. (Washington; for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1969), by W. Murray Bullis (page images at HathiTrust)
Longitudinal magnetoresistance in polar semiconductors / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards, 1972), by Robert L. Peterson, Institute for Basic Standards (U.S.). Quantum Electronics Division, and United States. National Bureau of Standards. Technical note (page images at HathiTrust)
The benefits and risks of federal funding for Sematech., by Philip Webre and United States Congressional Budget Office (page images at HathiTrust)
Selected semiconductor circuits handbook / (New York : Wiley, [1960]), by Inc Transistor Applications, ed. by Seymour Schwartz (page images at HathiTrust)
Semiconductor products handbook. (Syracuse, N.Y., 1954-), by General Electric Company. Electronics Division (page images at HathiTrust)
Third semi-annual radiation effects symposium : volume 4 of 6 electronics and semi-conductors papers /, by sponsor United States. Air Force. Air Research and Development Command, U.S. Atomic Energy Commission. Technical Information Service Extension, and Lockheed Aircraft Corporation (page images at HathiTrust)
Transistor engineering and introduction to integrated semiconductor circuits /, by Alvin B. Phillips (page images at HathiTrust)
Semiconductor device physics. (Englewood Cliffs, N.J. : Prentice-Hall, 1962), by Allen Nussbaum (page images at HathiTrust)
Semiconductor devices and applications. (New York, McGraw-Hill, 1961), by Richard Anton Greiner (page images at HathiTrust)
Effects of energetic photon irradiation on germanium /, by P. H. Hannaway, E. Y. Wang, H. M. DeAngelis, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
On the study of fine structure in tunnel junctions /, by F. D. Shepherd, T. R. King, V. E. Vickers, A. C. Yang, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
Infrared lattice vibrations of magnesium stannide /, by A. Kahan, E. .V. Loewenstein, H. G. Lipson, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
A study of band edge distortion in heavily doped germanium /, by Freeman D. Shepherd and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
Observation of exponential band edges in degenerate N-type Germanium /, by F. D. Jr Shepherd, A. C. Yang, V. E. Vickers, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
A microwave source using ultrasonic amplification in piezoelectric semiconductors /, by Andrew J. Jr Slobodnik and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
Zener diode handbook; a theoretical discussion coupled with practical considerations and illustrated application data on the use of semiconductor voltage regulating devices. ([El Segundo, Calif., 1960]), by International Rectifier (Firm) (page images at HathiTrust; US access only)
Bibliography on semiconductors for thermoelectric use / (Washington, D. C. : U. S. Govt. Print. Off., 1959), by Ednah Harriette Illsley and Haruo Kat©Æo (page images at HathiTrust)
Charge collection and charge-collection time in semiconductor particle detectors / (Lemont, III. : Argonne National Laboratory, 1966), by Niels J. Hansen, Argonne National Laboratory. ANL., and U.S. Atomic Energy Commission. ANL. (page images at HathiTrust)
ARPA/NBS workshop II : hermeticity testing for integrated circuits / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs. U.S. Govt. Print. Off., 1974), by Harry A. Schafft and United States. National Bureau of Standards. Special publication (page images at HathiTrust)
Bibliography on semiconductor nuclear radiation detectors / (Oak Ridge, Tenn., Oak Ridge National Laboratory, 1958), by James L. Blankenship and U.S. Atomic Energy Commission. Division of Technical Information (page images at HathiTrust)
High temperature semiconductors for thermoelectric conversion / (Washington D.C., : Technical Services, Department of Commerce ;, 1960), by S.W. Kurnick, J.F Leavy, R.L Fitzpatrick, M Cutler, United States Maritime Administration, General Dynamics Corporation. General Atomic Division, and U.S. Atomic Energy Commission (page images at HathiTrust)
Methods of measurement for semiconductor materials, process control, and devices; ([Washington, For sale by the Supt. of Docs., U.S. Govt. Print. Off.]), by United States. National Bureau of Standards (page images at HathiTrust)
Semiconductor measurement technology: ([Washington] U.S. Dept. of Commerce, National Bureau of Standards; [for sale by the Supt. of Docs., U.S. Govt. Print. Off.]), by Institute for Applied Technology (U.S.). Electronic Technology Division (page images at HathiTrust)
Fundamentals of semiconductor and tube electronics / (New York : Wiley, 1962), by H. Alex Romanowitz (page images at HathiTrust)
Semiconductors and transistors. (New York, J. F. Rider, [1961]), by Alexander Schure (page images at HathiTrust)
The properties, physics, and design of semiconductor devices. (Princeton, N.J., D. Van Nostrand Co., [1959]), by John N. Shive (page images at HathiTrust)
Bibliography on the measurement of bulk resistivity of semiconductor materials for electron devices. (Washington : For sale by the Superintendent of Documents, U. S. Govt. Print. Off, 1964), by Judson C. French (page images at HathiTrust)
Second breakdown in semiconductor devices ; a bibliography. (Washington : Electronic Instrumentation Division, Institute for Applied Technology, National Bureau of Standards. U. S. Dept. of Commerce, 1967), by Harry A. Schafft and Institute for Applied Technology (U.S.). Electronic Instrumentation Division (page images at HathiTrust)
Metrology for submicrometer devices and circuits / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1980), by W. Murray Bullis and United States. National Bureau of Standards. Special publication (page images at HathiTrust)
Semiconductor measurement technology : [progress report] April 1, 1977 to September 30, 1977 / ([Washington, D.C.] : U.S. Dept. of Commerce, National Bureau of Standards, 1980), by W. Murray Bullis, United States. National Bureau of Standards. Special publication, and United States. National Bureau of Standards (page images at HathiTrust)
Semiconductor measurement technology: progress report, January 1 to June 30, 1975 / (Washington, D.C. : U.S. National Bureau of Standards, 1976), by W. Murray Bullis and United States. National Bureau of Standards. Special publication (page images at HathiTrust)
Microelectronic test pattern NBS-4 / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1978), by W. Robert Thurber, Martin G. Buehler, and United States. National Bureau of Standards. Special publication (page images at HathiTrust)
Thermal resistance measurements on power transistors / ([Washington, D.C.] : U.S. Dept. of Commerce, National Bureau of Standards : For sale by Supt. of Docs., U.S. Govt. Print. Off., 1979), by Sherwin Rubin, Frank F. Oettinger, and United States. National Bureau of Standards. Special publication (page images at HathiTrust)
Formation of uniformly charged conducting droplets and possible propulsion applications / (Los Alamos, N.M. : Los Alamos Scientific Laboratory of the University of California, 1961), by Marvin M. Hoffman, Los Alamos Scientific Laboratory, and U.S. Atomic Energy Commission (page images at HathiTrust)
Charge collection in semiconductor particle detectors / ([Upton, N.Y. : Brookhaven National Laboratory,], [1961]), by G. L. Miller, W. M. Gibson, Brookhaven National Laboratory, and U.S. Atomic Energy Commission (page images at HathiTrust)
Atomic hydrogen recombination and catalysis by molecules and particles / (Los Alamos, N.M. : Los Alamos Scientific Laboratory of the University of California, 1962), by Keith A. Brueckner, U.S. Atomic Energy Commission, and Los Alamos Scientific Laboratory (page images at HathiTrust)
Radiation effects on semiconductor devices / (Los Alamos, N.M. : Los Alamos Scientific Laboratory of the University of California, 1961), by Carroll Sue Schwiening, U.S. Atomic Energy Commission, and Los Alamos Scientific Laboratory (page images at HathiTrust)
Measurement of minority carrier lifetimes in semiconductors / (Oak Ridge, Tenn. : United States Atomic Energy Commission, Technical Information Service, 1957), by Y. Nishina, Gordon Charles Danielson, Ames Laboratory, and U.S. Atomic Energy Commission (page images at HathiTrust)
Remark on the Seebeck coefficient of polar semiconductors / (Washington D.C., : Technical Services, Department of Commerce ;, 1960), by J. Appel, United States Maritime Administration, U.S. Atomic Energy Commission, and General Dynamics Corporation. General Atomic Division (page images at HathiTrust)
Galvanomagnetic measurements in highly conducting semiconductors / (Washington D.C., : Technical Services, Department of Commerce ;, 1960), by S.W. Kurnick, R.L Fitzpatrick, United States Maritime Administration, General Dynamics Corporation. General Atomic Division, and U.S. Atomic Energy Commission (page images at HathiTrust)
Initial development of a semi-conductor fast neutron dosimeter /, by Benedict Cassen, Herbert Gass, Thomas Crough, Los Angeles University of California, and U.S. Atomic Energy Commission (page images at HathiTrust)
Low cost solar array project : experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process : quarterly progress report, October-December 1979., by Union Carbide Corporation, Jet Propulsion Laboratory (U.S.), Low-Cost Solar Array Project, and United States. Department of Energy. Division of Solar Energy (page images at HathiTrust)
Low cost solar array project : experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process : quarterly progress report, July-September 1980., by Union Carbide Corporation, Low-Cost Solar Array Project, Jet Propulsion Laboratory (U.S.), and United States. Department of Energy. Division of Solar Energy (page images at HathiTrust)
Low cost solar array project : experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process : quarterly progress report, April-June 1980., by Union Carbide Corporation, Low-Cost Solar Array Project, Jet Propulsion Laboratory (U.S.), and United States. Department of Energy. Division of Solar Energy (page images at HathiTrust)
Determination of oxygen content in germanium and silicon by He³ ion activation /, by G. I. Aleksandrova, G. I. Shmanenkova, D. Ya Choporov, G. V. Sukhov, G. P. Pleshakova, G. A. Kotel℗ʹnikov, A. M. Demidov, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
Rectification of semiconductors in a thermal field /, by I. M. ©±T©ƠSidil℗ʹkovski©Œi, U.S. Atomic Energy Commission, and National Science Foundation (U.S.) (page images at HathiTrust)
Sensitization of the internal photoeffct of semiconductors by chlorophyll and allied pigments /, by Ye. K. Putseiko, A. N. Terein, U.S. Atomic Energy Commission, and National Science Foundation (U.S.) (page images at HathiTrust)
Synthesis of semiconductor materials using nuclear radiation : final report /, by Kalman M. Held, Richard J. Goldman, U.S. Atomic Energy Commission. New York Operations Office, and Technical Research Group (page images at HathiTrust)
Synthesis of semiconductor materials by radiation induced reactions /, by Kalman M. Held, Richard J. Goldman, U.S. Atomic Energy Commission. New York Operations Office, Technical Research Group, and U.S. Atomic Energy Commission. Office of Isotopes Development (page images at HathiTrust)
Spreading resistance analysis for silicon layers with nonuniform resistivity / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1979), by David H. Dickey, James R. Ehrstein, and United States. National Bureau of Standards. Special publication (page images at HathiTrust)
Semiconductor measurement technology : progress report, January 1 to June 30, 1976 / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards, 1977), by United States. National Bureau of Standards, W. Murray Bullis, and United States. National Bureau of Standards. Special publication (page images at HathiTrust)
DISTRIB I, an impurity redistribution computer program / ([Washington] : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979), by David Gilsinn and Richard Kraft (page images at HathiTrust)
A wafer chuck for use between -196 and 350⁰C / (Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979), by R. Y. Koyama, Martin G. Buehler, United States Defense Advanced Research Projects Agency, and United States. Division of Electric Energy Systems (page images at HathiTrust)
Digest of literature on semiconductors and their applications, 1952., by Battelle Memorial Institute (page images at HathiTrust; US access only)
Characteristics of tunneling P-N junctions / (Washington, D.C. : National Aeronautics and Space Administration ; Springfield, VA : For sale by the Clearinghouse for Federal Scientific and Technical Information, 1968), by John B. Hopkins, Electronics Research Center (U.S.), and United States National Aeronautics and Space Administration (page images at HathiTrust; US access only)
Zener diode handbook; a theoretical discussion coupled with practical considerations and illustrated application data on the use of semiconductor voltage regulating devices. ([El Segundo, Calif., 1961]), by El Segundo International Rectifier Corporation (page images at HathiTrust; US access only)
A handbook of selected semiconductor circuits. (Washington, U. S. Govt. Print. Off., 1960), by Inc Transistor Applications and United States Navy Department Bureau of Ships, ed. by Seymour Schwartz (page images at HathiTrust)
Rectifier components guide; a handy guide for the proper selection of semiconductor component rectifiers. (Auburn, N.Y., Application Engineering Center, General Electric Co., Rectifier Components Dept., [1961]), by General Electric Company. Rectifier Components Dept (page images at HathiTrust)
The market for semiconductor devices in West Germany and Italy. ([Washington, D.C.] : The Administration : [for sale by the Supt. of Docs., U.S. Govt. Print Off., 1964]), by United States. Business and Defense Services Administration (page images at HathiTrust)
Selected semiconductor circuits. (Washington, U. S. Govt. Print. Off., 1960), by Inc Transistor Applications and United States Navy Department Bureau of Ships (page images at HathiTrust)
Radioisotope semiconductor and thermoelement research and development : February 13, 1961 to July 17, 1962; (Washington, D.C., Office of Technical Services, Dept. of Commerce, [1962?]), by Martin Marietta Corporation. Nuclear Division. Energy Conversion Research and Development Laboratories, U.S. Atomic Energy Commission, Martin Company. Nuclear Division, and N.G. preparer Asbed (page images at HathiTrust)
Silicon carbide for semiconductors /, by Gus J. Caras, George C. Marshall Space Flight Center, U.S. Army Aviation and Missile Command, Battelle Memorial Institute, U.S. Atomic Energy Commission, and Redstone Scientific Information Center (page images at HathiTrust)
Preindications of failure in electronic components /, by J. W. Klapheke, J. L. Easterday, B. C. Spradlin, George C. Marshall Space Flight Center, U.S. Army Aviation and Missile Command, Battelle Memorial Institute, U.S. Atomic Energy Commission, and Redstone Scientific Information Center (page images at HathiTrust)
Bibliography on semiconductor nuclear radiation detectors /, by J. L. Blankenship and U.S. Atomic Energy Commission. Division of Technical Information (page images at HathiTrust)
Bibliography on semiconductor nuclear radiation detectors /, by Henry D. Raleigh, J. L. Blankenship, and U.S. Atomic Energy Commission. Division of Technical Information (page images at HathiTrust)
Proceedings of the Tenth International Conference on the Physics of Semiconductors : Cambridge, Massachusetts, August 17-21, 1970 /, by Mass.) International Conference on the Physics of Semiconductors (10th : 1970 : Cambridge, Frank Stern, John C. Hensel, Seymour P. Keller, U.S. Atomic Energy Commission, and International Union of Pure and Applied Physics (page images at HathiTrust)
Report on transient radiation effects on electronic components and semiconductor devices /, by D. C. Jones, E. N. Wyler, Donald J. Hamman, W. E. Chapin, F. J. Reid, United States. Air Force. Systems Command. Aeronautical Systems Division, and Ohio) Radiation Effects Information Center (Columbus (page images at HathiTrust)
Low cost solar array project : experimental process system development unit for producing semiconductor-grade silicon using the silane-to- silicon process., by Union Carbide Corporation, Low-Cost Silicon Solar Array Project (U.S.), Jet Propulsion Laboratory (U.S.), and United States. Department of Energy. Division of Solar Energy (page images at HathiTrust)
Low cost solar array project : experimental process system development unit for producing semiconductor-grade silicon using the silane-to- silicon process., by Union Carbide Corporation, Low-Cost Silicon Solar Array Project (U.S.), Jet Propulsion Laboratory (U.S.), and United States. Department of Energy. Division of Solar Energy (page images at HathiTrust)
Thermal stability of Wurtzite and Sphalerite structures /, by Yoshizō Inomata and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
Theoretical and experimental research in thermoelectricity /, by Electronic Systems Laboratory Massachusetts Institute of Technology, Air Force Cambridge Research Center (U.S.). Electronics Research Directorate. issuing body, and Massachusetts Institute of Technology. Energy Laboratory (page images at HathiTrust)
Procedure for the analysis of semiconductor failures / (Albuquerque, N.M. : Sandia Corporation, 1965), by R. D. Solberg, U.S. Atomic Energy Commission, and Sandia Laboratories (page images at HathiTrust; US access only)
Low flux nuclear radiation effects on semiconductor devices (BMI-LF-1) /, by M. N. Robinson, U.S. Atomic Energy Commission. Technical Information Center, and North American Aviation. Atomics International Division (page images at HathiTrust)
Comparison of neutron and gamma radiation damage in semiconductors / (Canoga Park, California : Atomics International, [1965]), by M. N. Robinson, North American Aviation. Atomics International Division, and U.S. Atomic Energy Commission (page images at HathiTrust)
The effect of electron irradiation prior to reaction on the activity of a semiconductor catalyst : final report /, by Edward A. Mason, N. J. Stevens, Robert C. Reid, U.S. Atomic Energy Commission. New York Operations Office, and U.S. Atomic Energy Commission. Office of Isotopes Development (page images at HathiTrust)
A unique double deposition system /, by J. H. Bloom, R. L. Phipps, C. E. Ludington, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
Semiconductor electronics and integrated circuits. (Ann Arbor, College of Engineering, University of Michigan.), by University of Michigan. Engineering Summer Conferences (page images at HathiTrust; US access only)
Cadmium sulfide, a history of semiconductor research at the Aerospace Research Laboratories, (Washington : Historical Division, Office of Information, Office of Aerospace Research; for sale by the Superintendent of Documents, U. S. Govt. Print. Off., 1964), by Nick A. Komons (page images at HathiTrust)
Laser scanning of active semiconductor devices--videotape script / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1976), by David E. Sawyer, David W. Berning, and United States. National Bureau of Standards. Special publication (page images at HathiTrust)
A laser scanner for semiconductor devices / (Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1977), by David E. Sawyer, David W. Berning, and United States. National Bureau of Standards. Special publication (page images at HathiTrust)
High temperature thermoelectric generator /, by C. M. Henderson, G. H. Ringrose, H. B. Jankowsky, E. R. Beaver, R. G. Ault, sponsor United States. Air Force. Systems Command. Aeronautical Systems Division, sponsor Monsanto Research Corporation, and sponosr Wright-Patterson Air Force Base (Ohio) (page images at HathiTrust)
Research on improved solar generator /, by K. S. Tarneja, sponsor United States. Air Force. Systems Command. Aeronautical Systems Division, and sponsor Westinghouse Electric Corporation (page images at HathiTrust)
Semiconductor diode performance in nuclear radiation environments /, by Harlan G. Hamre, William N. McElroy, Raymond C. Barrell, sponsor Wright-Patterson Air Force Base (Ohio), sponsor Armour Research Foundation (U.S.), and sponsor United States. Air Force. Systems Command. Aeronautical Systems Division (page images at HathiTrust)
Research on semiconductor single crystal circuit development /, by Arthur D. Evans, sponsor United States. Air Force. Air Research and Development Command, sponsor United States. Wright Air Development Division, and sponsor Texas Instruments Incorporated (page images at HathiTrust)
Development of an analog multiplier, based on the Hall effect, by R. G. Cameron, sponsor Battelle Memorial Institute, and sponsor Aerospace Medical Research Laboratories (U.S.) (page images at HathiTrust)
Calculations of the frequency dependence of elasto-optic constants of infrared laser window materials / (Hanscom AFB, Mass. : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1974), by Bernard Bendow, Peter D. Gianino, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
Theory of the thermal conductivity of metals, alloys and semiconductors /, by John R. Madigan, sponsor United States. Air Force. Systems Command. Aeronautical Systems Division, and sponsor Borg-Warner Corporation (page images at HathiTrust)
A review of ceramic thin film technology /, by Milo Macha, issuing agency Air Force Materials Laboratory (U.S.), and Inc. Librascope Group General Precision Systems (page images at HathiTrust)
Surface temperature measurements for ion bombarded Si and GaAs at 1.0 to 2.0 MeV / (L.G. Hanscom Field, Mass. : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1973), by L. F. Lowe, L. J. Eyges, M. L. Deane, D. E. Davies, J. K. Kennedy, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
The analysis of optical surface scattering from epitaxial films / (L.G. Hanscom Field, Mass. : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1973), by Richard N. Brown and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
Transient capacitance measurement of deep defect levels in GaAs and Si / (Hanscom AFB, Mass. : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1976), by J. T. Schott, W. R. White, H. M. DeAngelis, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
Growth and characterization of tetragonal (rutile) GeO2 crystals /, by John W. Goodrum and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
The formation and characteristics of a broad-area semiconductor field emission cathode, ([Ithaca, N. Y.], 1969), by John Walter Hanson (page images at HathiTrust; US access only)
A study of some low frequency applications of silicon capacitors. Internal research. (Buffalo, 1960.), by Cornell Aeronautical Laboratory and D. H. Bock (page images at HathiTrust)
Recombination kinetics for thermally dissociated Li-B ion pairs in Si (Schenectady, N. Y., General Electric Research Laboratory, Research Information Section, 1961), by Erik Mauritz Pell and Frank Slagle Ham (page images at HathiTrust)
Investigation of new semiconductor phenomenon /, by James Hanlon, sponsor Ohio State University. Research Foundation, and issuing body Aerospace Medical Research Laboratories (U.S.) (page images at HathiTrust)
Research and development for surface protection for silicon devices /, by S. S. Flaschen, M. A. Hall, H. W. Cooper, issuing body Air Force Cambridge Research Laboratories (U.S.), and Inc. Semiconductor Products Division Motorola (page images at HathiTrust)

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