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Doped semiconductors

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• Semiconductors

• Semiconductor doping

• Doped semiconductors -- Electric properties
• Doped semiconductors -- Optical properties
• Doped semiconductors -- Spectra

• Proton damage in semiconductor devices (National Aeronautics and Space Administration :, 1964), by D. M. Arnold, United States National Aeronautics and Space Administration, and Radio Corporation of America (page images at HathiTrust)

• Spectral emissivity of highly doped silicon (National Aeronautics and Space Administration ;, 1968), by Curt H. Liebert, Ralph D. Thomas, and Lewis Research Center (page images at HathiTrust)

• Spectral emissivity of highly doped silicon (National Aeronautics and Space Administration ;, 1968), by Curt H. Liebert, Ralph D. Thomas, and Lewis Research Center (page images at HathiTrust)

• Spectral emissivity of highly doped silicon (National Aeronautics and Space Administration ;, 1968), by Curt H. Liebert, Ralph D. Thomas, and Lewis Research Center (page images at HathiTrust)

Items below (if any) are from related and broader terms.

• Semiconductor measurement technology. (U.S. Dept. of Commerce, National Bureau of Standards :, 1981), by J. J. Filliben, Y. M. Liu, R. L. Mattis, W. Robert Thurber, and United States. National Bureau of Standards (page images at HathiTrust)
• Angular sensitivity of controlled implanted doping profiles (U.S. Dept. of Commerce, National Bureau of Standards :, 1978), by Robert G. Wilson (page images at HathiTrust)
• The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon (U.S. Dept. of Commerce, National Bureau of Standards :, 1979), by Sheng S. Li, National Science Foundation (U.S.), and United States Defense Advanced Research Projects Agency (page images at HathiTrust)
• The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon (U.S. Dept. of Commerce, National Bureau of Standards :, 1977), by Sheng S. Li and United States. National Bureau of Standards (page images at HathiTrust)
• Semiconductor measurement technology : results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon (U.S. Dept. of Commerce, National Bureau of Standards ;, 1987), by John Albers and United States. National Bureau of Standards (page images at HathiTrust)
• Theoretical study of electron mobility in modulation-doped aluminum gallium arsenide (National Aeronautics and Space Administration, Scientific and Technical Information Branch ;, 1983), by Benjamin Segall and United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch (page images at HathiTrust)
• NASA TN D-4834 (National Aeronautics and Space Administration :, 1968), by Wilfred D. Hesketh, Langley Research Center, and United States National Aeronautics and Space Administration (page images at HathiTrust; US access only)

• Applications of thermoluminescence to chromium-doped lithium germanate (L.G. Hansom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1969., 1969), by Albert D. Johnson, James A. Littler, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)

• Semiconductor measurement technology. (U.S. Dept. of Commerce, National Bureau of Standards :, 1980), by D. R. Myers and United States. National Bureau of Standards (page images at HathiTrust)
• Fabrication of semiconductor devices by neutron transmutation doping. (Oak Ridge, Tennessee : United States Atomic Energy Commission, Technical Information Service., in the 20th century), by U.S. Atomic Energy Commission. New York Operations Office, U.S. Atomic Energy Commission. Division of Technical Information, and Inc Fundamental Methods Associates (page images at HathiTrust)
• Fabrication of silicon microcircuits by neutron transmutation doping : annual report (Fundamental Methods Associates, Inc., 1966), by Carl N. Klahr, Melvin S. Cohen, Inc Fundamental Methods Associates, and U.S. Atomic Energy Commission. Division of Technical Information (page images at HathiTrust)

• Fabrication of semiconductor devices by neutron transmutation doping. (Oak Ridge, Tennessee : United States Atomic Energy Commission, Technical Information Service., in the 20th century), by U.S. Atomic Energy Commission. New York Operations Office, U.S. Atomic Energy Commission. Division of Technical Information, and Inc Fundamental Methods Associates (page images at HathiTrust)

• DISTRIB I, an impurity redistribution computer program (U.S. Dept. of Commerce, National Bureau of Standards :, 1979), by David Gilsinn and Richard Kraft (page images at HathiTrust)

• DISTRIB I, an impurity redistribution computer program (U.S. Dept. of Commerce, National Bureau of Standards :, 1979), by David Gilsinn and Richard Kraft (page images at HathiTrust)

• Materials for High-Temperature Semiconductor Devices (1995), by National Research Council National Materials Advisory Board (page images with commentary at NAP)
• Fundamentals of Transistor Physics (New York: J. F. Rider; London: Chapman and Hall, c1960), by Irving M. Gottlieb (PDF at worldradiohistory.com)
• Semiconductors and Transistors (New York: J. F. Rider, c1951), ed. by Alexander Schure (PDF at worldradiohistory.com)
• Semiconductor theory and technology. ([Ann Arbor], between 1000 and 1999), by University of Michigan. Engineering Summer Conferences (page images at HathiTrust; US access only)
• The semiconductor industry : a survey of structure, conduct, and performance, staff report to the Federal Trade Commission. (Bureau of Economics, The Commission : for sale by the Supt. of Docs., U.S. Govt. Print. Off.], 1977), by Douglas W Webbink and United States Federal Trade Commission (page images at HathiTrust)
• Semiconductor devices and applications. (McGraw-Hill, 1961), by Richard Anton Greiner (page images at HathiTrust)
• Semiconductor device physics. (Prentice-Hall, 1962), by Allen Nussbaum (page images at HathiTrust)
• The physical theory of transistors. (McGraw-Hill, 1961), by Leopoldo B. Valdes (page images at HathiTrust)
• Industrial transistor & semiconductor handbook. (H. W. Sams, 1961), by Robert B. Tomer (page images at HathiTrust)
• Fundamentals of modern semiconductors (H.W. Sams, 1962), by Barron Kemp and R.H. McDonald (page images at HathiTrust)
• Introduction to integrated semi-conductor circuits. (Wiley, 1963), by Adi J. Khambata (page images at HathiTrust)
• Fundamentals of semiconductor and tube electronics (Wiley, 1962), by H. Alex Romanowitz (page images at HathiTrust)
• Semiconductors and transistors. (J. F. Rider, 1961), by Alexander Schure (page images at HathiTrust)
• Semiconductor devices. (Technical Division, Holt, Rinehart and Winston, 1961), by Rufus P. Turner (page images at HathiTrust)
• Semiconductors and transistors. (McGraw-Hill, 1959), by Douglas M. Warschauer (page images at HathiTrust)
• Transistor engineering and introduction to integrated semiconductor circuits (1962), by Alvin B. Phillips (page images at HathiTrust)
• Electron tubes and semiconductors. (Prentice-Hall, 1958), by J. J. De France (page images at HathiTrust)
• Vacuum-tube and semiconductor electronics. (McGraw-Hill, 1958), by Jacob Millman (page images at HathiTrust)
• The properties, physics, and design of semiconductor devices. (D. Van Nostrand Co., 1959), by John N. Shive (page images at HathiTrust)
• Selected semiconductor circuits. (U. S. Govt. Print. Off., 1960), by Inc Transistor Applications and United States Navy Department Bureau of Ships (page images at HathiTrust)
• Fundamentals of transistor physics. (J. F. Rider, 1960), by Irving M. Gottlieb (page images at HathiTrust)
• Semiconductor-diode parametric amplifiers (Prentice-Hall, 1961), by Lawrence A. Blackwell and Kenneth L. Kotzebue (page images at HathiTrust)
• Industry's most modern electronic components from the world's largest semiconductor plant. ([Dallas, 1959), by inc. Semiconductor Components Division Texas Instruments (page images at HathiTrust)
• Experiments in semiconductor application and design (John Wiley, 1963), by Clyde N. Herrick and Melchior S. Estrada (page images at HathiTrust)
• A handbook of selected semiconductor circuits. (U. S. Govt. Print. Off., 1960), by Inc Transistor Applications, Seymour Schwartz, and United States Navy Department Bureau of Ships (page images at HathiTrust)
• Rectifier components guide; a handy guide for the proper selection of semiconductor component rectifiers. (Application Engineering Center, General Electric Co., Rectifier Components Dept., 1961), by General Electric Company. Rectifier Components Dept (page images at HathiTrust)
• Semiconductor products handbook. (Syracuse, N.Y., 1954), by General Electric Company. Electronics Division (page images at HathiTrust)
• A general survey of the semiconductor field (U.S. Dept. of Commerce, National Bureau of Standards :, 1962), by George William Reimherr and United States. National Bureau of Standards (page images at HathiTrust)
• Correction factor tables for four-point probe resistivity measurements on thin, circular semiconductor samples (U.S. Dept. of Commerce, National Bureau of Standards ;, 1964), by Lydon J. Swartzendruber and United States. National Bureau of Standards (page images at HathiTrust; US access only)
• Calculations for comparing two-point and four-point probe resistivity measurements on rectangular bar-shaped semiconductor samples. ([U.S. Dept. of Commerce, National Bureau of Standards]; for sale by the Supt. of Docs., Govt. Print. Off., 1964), by Lydon J. Swartzendruber (page images at HathiTrust)
• Research on new high-temperature semiconducting materials (Aeronautical Research Laboratories, Air Force Research Division, Air Research and Development Command, U.S. Air Force, 1960), by Shaun S. Devlin and Clevite Corporation (page images at HathiTrust)
• Copyright protection for imprinted design patterns on semiconductor chips : hearing before the Subcommittee on Courts, Civil Liberties, and the Administration of Justice of the Committee on the Judiciary, House of Representatives, Ninety-sixth Congress, first session, on H.R. 1007 ... April 16, 1979. (U.S. Govt. Print. Off. :, 1979), by Civil Liberties United States. Congress. House. Committee on the Judiciary. Subcommittee on Courts (page images at HathiTrust)
• Industrial technology hearing before the Committee on Commerce, Science, and Transportation, United States Senate, Ninety-fifth Congress, second session, on governmental policy and innovation in the semiconductor and computer industries ... October 30, 1978. (U.S. Govt. Print. Off., 1979), by United States Senate Committee on Commerce, Science, and Transportation (page images at HathiTrust)
• Charge collection and charge-collection time in semiconductor particle detectors (Argonne National Laboratory, 1966), by Niels J. Hansen, Argonne National Laboratory, and U.S. Atomic Energy Commission (page images at HathiTrust)
• An introduction to semiconductor electronics (McGraw-Hill, 1963), by Rajendra P Nanavati (page images at HathiTrust)
• Theory of noise in a multidimensional semiconductor with a p-n junction. (Catholic University of America Press, 1957), by Max Solow (page images at HathiTrust; US access only)
• Tabulation of data on semiconductor amplifiers and oscilators at microwave frequencies [by] Charles P. Marsden and Rita Y. Cowan. (U.S. National Bureau of Standards; for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1970), by Charles P. Marsden and Rita Y. Cowan (page images at HathiTrust)
• Measurement methods for the semiconductor device industry - a summary of NBS activity. (for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1969), by W. Murray Bullis (page images at HathiTrust)
• Longitudinal magnetoresistance in polar semiconductors (U.S. Dept. of Commerce, National Bureau of Standards, 1972), by Robert L. Peterson, Institute for Basic Standards (U.S.). Quantum Electronics Division, and United States. National Bureau of Standards (page images at HathiTrust)
• Carrier lifetime measurement by the photoconductive decay method (U.S. Dept. of Commerce, National Bureau of Standards :, 1972), by Richard L. Mattis, A. James Baroody, and United States. National Bureau of Standards (page images at HathiTrust)
• Competitiveness of the U.S. semiconductor industry : hearing before the Subcommittee on Commerce, Consumer Protection, and Competitiveness of the Committee on Energy and Commerce, House of Representatives, One Hundredth Congress, first session, June 9, 1987. (U.S. G.P.O. :, 1988), by Consumer Protection United States. Congress. House. Committee on Energy and Commerce. Subcommittee on Commerce (page images at HathiTrust)
• Renewal of the United States-Japan semiconductor agreement : hearing before the Subcommittee on International Trade of the Committee on Finance, United States Senate, One Hundred Second Congress, first session, March 22, 1991. (U.S. G.P.O. :, 1991), by United States. Congress. Senate. Committee on Finance. Subcommittee on International Trade (page images at HathiTrust)
• Silicon detectors for high energy physics : proceedings of a workshop held at Fermilab, October 15-16, 1981 (U.S. G.P.O., 1982), by Thomas Ferbel, University of Rochester, Fermi National Accelerator Laboratory, and United States. Dept. of Energy (page images at HathiTrust; US access only)
• Electron tubes and semiconductors; production, consumption, trade. ([Washington, 1960), by United States. Business and Defense Services Administration (page images at HathiTrust)
• An investigation of semiconductors by optical methods (Catholic University of America Press, 1955), by Edward Eugene Gardner (page images at HathiTrust; US access only)
• Solid state technology; a compilation. (National Aeronautics and Space Administration; [for sale by the National Technical Information Service, Springfield, Va., 1973), by United States. National Aeronautics and Space Administration. Technology Utilization Office (page images at HathiTrust)
• The formation and characteristics of a broad-area semiconductor field emission cathode ([Ithaca, N. Y.], 1969), by John Walter Hanson (page images at HathiTrust; US access only)
• A study of some low frequency applications of silicon capacitors. Internal research. (1960., 1960), by Cornell Aeronautical Laboratory and D. H. Bock (page images at HathiTrust)
• Semiconductor detectors in medicine, March 8-9, 1973, presented by Nuclear Medicine Division, Department of Radiology, University of California School of Medicine and Continuing Education in Health Sciences, University of California, San Francisco, California, supported in part by KeVex Corporation, Burlingame, California [et al. (U. S. Atomic Energy Commission, Office of Information Services, Technical Information Center; [available from the National Technical Information Service, U. S. Dept. of Commerce, Springfield, Va.], 1973), by San Francisco. Nuclear Medicine Division University of California and San Francisco. Continuing Education in Health Sciences University of California (page images at HathiTrust)
• Recombination kinetics for thermally dissociated Li-B ion pairs in Si (General Electric Research Laboratory, Research Information Section, 1961), by Erik Mauritz Pell and Frank Slagle Ham (page images at HathiTrust)
• Phonon instabilities and structural transformations of group IV semiconductors (1984), by Rana Biswas (page images at HathiTrust)
• Zener diode handbook; a theoretical discussion coupled with practical considerations and illustrated application data on the use of semiconductor voltage regulating devices. ([El Segundo, Calif., 1960), by International Rectifier (Firm) (page images at HathiTrust; US access only)
• The Semiconductor Chip Protection Act of 1983 : hearing before the Subcommittee on Patents, Copyrights, and Trademarks of the Committee on the Judiciary, United States Senate, Ninety-eighth Congress, first session, on S. 1201 ... May 19, 1983. (U.S. G.P.O., 1984), by Copyrights United States. Congress. Senate. Committee on the Judiciary. Subcommittee on Patents (page images at HathiTrust)
• Semiconductor (The Institute, 1990), by National Institute of Standards and Technology (U.S.) (page images at HathiTrust)
• Imports under items 806.30 and 807.00 of the Tariff schedules of the United States, 1979-82. (U.S. International Trade Commission, 1984), by Ruben Moller, Nancy Paris, Cynthia Wilson, and United States International Trade Commission (page images at HathiTrust)
• Probable economic effect of providing duty-free treatment for U.S. imports of certain high technology products : report to the President on investigation no. TA-131(b)-9 under section 131(b) of the Trade Act of 1974. (U.S. International Trade Commission, 1985), by United States International Trade Commission (page images at HathiTrust)
• Methods of measurement for semiconductor materials, process control, and devices. Quarterly report, July 1 to Sept. 30, 1968. (Supt. of Docs., G.P.O., 1968), by United States. National Bureau of Standards and W. Murray Bullis (page images at HathiTrust)
• The market for semiconductor devices in West Germany and Italy. (The Administration : [for sale by the Supt. of Docs., U.S. Govt. Print Off., 1964), by United States. Business and Defense Services Administration (page images at HathiTrust)
• Dynamic random access memory semiconductors of 256 kilobits and above from Japan : determination of the Commission in investigation no. 731-TA-300(preliminary) under the Tariff act of 1930, together with the information obtained in the investigation. (U.S. International Trade Commission, 1986), by United States International Trade Commission, Howard Gooley, Ilene Hersher, and Nelson Hogge (page images at HathiTrust)
• Imports under items 806.30 and 807.00 of the Tariff schedules of the United States, 1982-85 : report on investigation no. 332-237, under section 332(b) of the Tariff Act of 1930. (U.S. International Trade Commission, 1986), by United States International Trade Commission (page images at HathiTrust)
• Methods of measurement for semicaonductor materials, process control, and devices : quarterly report, January 1 to March 31, 1970 (U.S. National Bureau of Standards; for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1970), by Institute for Applied Technology (U.S.) Electronic Technology Division, A. J. Baroody, and W. Murray Bullis (page images at HathiTrust)
• A simple model of space radiation damage in GaAs solar cells (National Aeronautics and Space Administration, Scientific and Technical Information Branch ;, 1983), by John W. Wilson, L. V. Stock, John J. Stith, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch (page images at HathiTrust)
• Semiconductor photoelectrochemistry (National Aeronautics and Space Administration, Scientific and Technical Information Branch ;, 1983), by A. Martin Buoncristiani, Charles E. Byvik, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch (page images at HathiTrust)
• Radiation damage to semiconductors by high-energy electron and proton radiation (National Aeronautics and Space Administration :, 1964), by John C. Corelli, H. B. Huntington, Rensselaer Polytechnic Institute, and United States National Aeronautics and Space Administration (page images at HathiTrust)
• Effect of mechanical strain on p-n junctions (National Aeronautics and Space Administration ;, 1965), by Jimmie J. Wortman and United States National Aeronautics and Space Administration (page images at HathiTrust)
• Superior photoengraving process for semiconductor devices (National Aeronautics and Space Administration];, 1966), by Charles Jackson Taylor, Goddard Space Flight Center, and Westinghouse Electric Corporation (page images at HathiTrust)
• NASA TN D-4403 (National Aeronautics and Space Administration ;, 1968), by John B. Hopkins, Electronics Research Center (U.S.), and United States National Aeronautics and Space Administration (page images at HathiTrust; US access only)
• Adhesion and friction of iron and gold in contact with elemental semiconductors (National Aeronautics and Space Administration ;, 1977), by Donald H. Buckley, William A. Brainard, and United States National Aeronautics and Space Administration (page images at HathiTrust)
• NASA TN D-6504 (National Aeronautics and Space Administration :, 1971), by R. K. Franks, J. B. Robertson, Langley Research Center, and United States National Aeronautics and Space Administration (page images at HathiTrust)
• NASA TN D-6717 (National Aeronautics and Space Administration :, 1972), by Herbert A. Will, J. Anthony Powell, Lewis Research Center, and United States National Aeronautics and Space Administration (page images at HathiTrust)
• Epitaxial growth of 6H silicon carbide in the temperature range 1320 ̊to 1390 ̊C (National Aeronautics and Space Administration ;, 1974), by Herbert A. Will, J. Anthony Powell, and Lewis Research Center (page images at HathiTrust)
• Formation of uniformly charged conducting droplets and possible propulsion applications (Los Alamos Scientific Laboratory of the University of California, 1961), by Marvin M. Hoffman, Los Alamos Scientific Laboratory, and U.S. Atomic Energy Commission (page images at HathiTrust)
• Selected semiconductor circuits handbook (Wiley, 1960), by Inc Transistor Applications and Seymour Schwartz (page images at HathiTrust)
• Om tryckets inflytande på det elektriska ledningsmotståndet hos selen och svavelsilver : akademisk avhandling (Almqvist & Wiksells Boktryckeri, 1909), by Fritz Gustav Albrecht Montén (page images at HathiTrust; US access only)
• Charge collection in semiconductor particle detectors (Brookhaven National Laboratory,], 1961), by G. L. Miller, W. M. Gibson, Brookhaven National Laboratory, and U.S. Atomic Energy Commission (page images at HathiTrust)
• Measurement of minority carrier lifetimes in semiconductors (United States Atomic Energy Commission, Technical Information Service, 1957), by Y. Nishina, Gordon Charles Danielson, Ames Laboratory, and U.S. Atomic Energy Commission (page images at HathiTrust)
• Automated data collection system applied to Hall effect and resistivity measurements (National Aeronautics and Space Administration ;, 1967), by Ralph D. Thomas and Lewis Research Center (page images at HathiTrust)
• Remark on the Seebeck coefficient of polar semiconductors (Technical Services, Department of Commerce ;, 1960), by J. Appel, United States Maritime Administration, U.S. Atomic Energy Commission, and General Dynamics Corporation. General Atomic Division (page images at HathiTrust)
• High temperature semiconductors for thermoelectric conversion (Technical Services, Department of Commerce ;, 1960), by S.W. Kurnick, J.F. Leavy, R.L. Fitzpatrick, M. Cutler, United States Maritime Administration, General Dynamics Corporation. General Atomic Division, and U.S. Atomic Energy Commission (page images at HathiTrust)
• Galvanomagnetic measurements in highly conducting semiconductors (Technical Services, Department of Commerce ;, 1960), by S.W. Kurnick, R.L. Fitzpatrick, United States Maritime Administration, General Dynamics Corporation. General Atomic Division, and U.S. Atomic Energy Commission (page images at HathiTrust)
• Radioisotope semiconductor and thermoelement research and development : February 13, 1961 to July 17, 1962 (Office of Technical Services, Dept. of Commerce, 1962), by Martin Marietta Corporation. Nuclear Division. Energy Conversion Research and Development Laboratories, U.S. Atomic Energy Commission, Martin Company. Nuclear Division, and N.G. Asbed (page images at HathiTrust)
• Laboratory manual to accompany the textbook Fundamentals of semiconductor and tube electronics (Wiley, 1962), by H. Alex Romanowitz (page images at HathiTrust; US access only)
• Silicon carbide for semiconductors (Redstone Arsenal, Alabama : Research Branch, Redstone Scientific Information Center, 1965., 1965), by Gus J. Caras, George C. Marshall Space Flight Center, U.S. Army Aviation and Missile Command, Battelle Memorial Institute, U.S. Atomic Energy Commission, and Redstone Scientific Information Center (page images at HathiTrust)
• Preindications of failure in electronic components (Redstone Arsenal, Alabama : Research Branch, Redstone Scientific Information Center, 1965., 1965), by J. W. Klapheke, J. L. Easterday, B. C. Spradlin, George C. Marshall Space Flight Center, U.S. Army Aviation and Missile Command, Battelle Memorial Institute, U.S. Atomic Energy Commission, and Redstone Scientific Information Center (page images at HathiTrust)
• Semiconductor nuclear radiation detectors ([Oak Ridge, Tennessee] : United States Atomic Energy Commission, Division of Technical Information, [1960], 1960), by J. L. Blankenship and U.S. Atomic Energy Commission. Division of Technical Information (page images at HathiTrust)
• Semiconductor nuclear radiation detectors ([Oak Ridge, Tennessee] : United States Atomic Energy Commission, Division of Technical Information, [1962], 1962), by Henry D. Raleigh, J. L. Blankenship, and U.S. Atomic Energy Commission. Division of Technical Information (page images at HathiTrust)
• Initial development of a semi-conductor fast neutron dosimeter (Oak Ridge, Tennessee : United States Atomic Energy Commission, Technical Information Service, 1954., 1954), by Benedict Cassen, Herbert Gass, Thomas Crough, Los Angeles University of California, and U.S. Atomic Energy Commission (page images at HathiTrust)
• Semiconductor measurement technology : microelectronic ultrasonic bonding (U.S. Dept. of Commerce, National Bureau of Standards; [for sale by the Supt. of Docs, U.S. Govt. Print. Off.] 1974., 1974), by George G. Harman and United States. National Bureau of Standards (page images at HathiTrust)
• Radiation polymerization of acetylene derivatives : final report (Monsanto Research Corp., Dayton Laboratory, 1962), by Mark Elias Gutzke, W. M. Yanko, and Monsanto Research Corporation (page images at HathiTrust; US access only)
• Proceedings of the Tenth International Conference on the Physics of Semiconductors : Cambridge, Massachusetts, August 17-21, 1970 (Oak Ridge, Tennessee : U.S. Atomic Energy Commission, Division of Technical Information, 1970., 1970), by Mass.) International Conference on the Physics of Semiconductors (10th : 1970 : Cambridge, Frank Stern, John C. Hensel, Seymour P. Keller, U.S. Atomic Energy Commission, and International Union of Pure and Applied Physics (page images at HathiTrust)
• Low cost solar array project : experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process : quarterly progress report, October-December 1979. (Washington, D.C. : U.S. Department of Energy, Solar Energy, 1979, 1979), by Union Carbide Corporation, Jet Propulsion Laboratory (U.S.), Low-Cost Solar Array Project, and United States. Department of Energy. Division of Solar Energy (page images at HathiTrust)
• Low cost solar array project : experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process : quarterly progress report, July-September 1980. (Washington, D.C. : U.S. Department of Energy, Solar Energy, 1980, 1980), by Union Carbide Corporation, Low-Cost Solar Array Project, Jet Propulsion Laboratory (U.S.), and United States. Department of Energy. Division of Solar Energy (page images at HathiTrust)
• Low cost solar array project : experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process : quarterly progress report, April-June 1980. (Washington, D.C. : U.S. Department of Energy, Solar Energy, 1980, 1980), by Union Carbide Corporation, Low-Cost Solar Array Project, Jet Propulsion Laboratory (U.S.), and United States. Department of Energy. Division of Solar Energy (page images at HathiTrust)
• CBS electron tubes and semiconductors, engineer's handbook. (CBS-Hytron, 1957) (page images at HathiTrust; US access only)
• Report on transient radiation effects on electronic components and semiconductor devices (Columbus, Ohio : Radiation Effects Information Center, Battelle Memorial Institute, 1963., 1963), by D. C. Jones, E. N. Wyler, Donald J. Hamman, W. E. Chapin, F. J. Reid, United States. Air Force. Systems Command. Aeronautical Systems Division, and Ohio) Radiation Effects Information Center (Columbus (page images at HathiTrust)
• Low cost solar array project : experimental process system development unit for producing semiconductor-grade silicon using the silane-to- silicon process. (Washington, D.C. : U.S. Department of Energy, Solar Energy, 1979., 1979), by Union Carbide Corporation, Low-Cost Silicon Solar Array Project (U.S.), Jet Propulsion Laboratory (U.S.), and United States. Department of Energy. Division of Solar Energy (page images at HathiTrust)
• Low cost solar array project : experimental process system development unit for producing semiconductor-grade silicon using the silane-to- silicon process. (Washington, D.C. : U.S. Department of Energy, Solar Energy, 1979., 1979), by Union Carbide Corporation, Low-Cost Silicon Solar Array Project (U.S.), Jet Propulsion Laboratory (U.S.), and United States. Department of Energy. Division of Solar Energy (page images at HathiTrust)
• Development of fault current controller technology : prototyping, laboratory testing, and field demonstration : final project report ([Sacramento, Calif.] : California Energy Commission, [2011], 2011), by Alexander Abramovitz, Keyue Smedley, Irvine University of California, and California Energy Commission. Energy Research and Development Division (page images at HathiTrust)
• Energy savings potential of solid-state lighting in general illumination applications : final report (Lighting Research and Development, Building Technologies Program, Office of Energy Efficiency and Renewable Energy, U.S. Department of Energy , 2003), by United States. Department of Energy. Office of Energy Efficiency and Renewable Energy. Building Technologies Program. Lighting Research and Development and Navigant Consulting (page images at HathiTrust)
• Thermal stability of Wurtzite and Sphalerite structures (L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1971., 1971), by Yoshizō Inomata and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• Theoretical and experimental research in thermoelectricity (Bedford, Massachusetts : Air Force Cambridge Research Center, Air Research and Development Command, United States Air Force, 1959., 1959), by Electronic Systems Laboratory Massachusetts Institute of Technology, Air Force Cambridge Research Center (U.S.). Electronics Research Directorate, and Massachusetts Institute of Technology. Energy Laboratory (page images at HathiTrust)
• Electron tubes and semiconductors : production : consumption : trade : selected foreign countries. ([Washington] : [U.S. Govt. Print. Off], [1960], 1960), by United States. Business and Defense Services Administration. Electronics Division and Ruth L. Cannon (page images at HathiTrust)
• Semiconductors : U.S. production and trade. (Washington, D.C. : U.S. Department of Commerce, Business and Defense Services Administration, 1961., 1961), by United States. Business and Defense Services Administration. Electronics Division (page images at HathiTrust)
• Methods of measurement for semiconductor materials, process control, and devices : quarterly report, July, 1 - Sept. 30, 1971 (Washington : GPO, 1971., 1971), by W. Murray Bullis (page images at HathiTrust)
• Metallic rectifiers and crystal diodes. (Rider, 1958), by Theodore Conti (page images at HathiTrust; US access only)
• Zener diode handbook; a theoretical discussion coupled with practical considerations and illustrated application data on the use of semiconductor voltage regulating devices. ([El Segundo, Calif., 1961), by El Segundo International Rectifier Corporation (page images at HathiTrust; US access only)
• Effects of energetic photon irradiation on germanium (L.G. Hansom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1964., 1964), by P. H. Hannaway, E. Y. Wang, H. M. DeAngelis, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• Infrared lattice vibrations of magnesium stannide (L.G. Hansom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1965., 1965), by A. Kahan, E. .V. Loewenstein, H. G. Lipson, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• A study of band edge distortion in heavily doped germanium (L.G. Hansom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1965., 1965), by Freeman D. Shepherd and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• Observation of exponential band edges in degenerate N-type Germanium (L.G. Hansom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1966., 1966), by F. D. Jr Shepherd, A. C. Yang, V. E. Vickers, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• A microwave source using ultrasonic amplification in piezoelectric semiconductors (L. G. Hansom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1968., 1968), by Andrew J. Jr Slobodnik and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• Digest of literature on semiconductors and their applications, 1952. (Columbus, Ohio : Semiconductor and Dielectrics Division, Battelle Memorial Institute, [1953], 1953), by Battelle Memorial Institute (page images at HathiTrust; US access only)
• High temperature thermoelectric generator (Wright-Patterson Air Force Base, Ohio : Flight Vehicle Power Branch, Air Force Aero Propulsion Laboratory, Research and Technology Division, United States Air Force, 1963., 1963), by C. M. Henderson, G. H. Ringrose, H. B. Jankowsky, E. R. Beaver, R. G. Ault, United States. Air Force. Systems Command. Aeronautical Systems Division, Monsanto Research Corporation, and Wright-Patterson Air Force Base (Ohio) (page images at HathiTrust)
• Growth and characterization of tetragonal (rutile) GeO2 crystals (L.G. Hansom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1971., 1971), by John W. Goodrum and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• Calculations of the frequency dependence of elasto-optic constants of infrared laser window materials (Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1974), by Bernard Bendow, Peter D. Gianino, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• Surface temperature measurements for ion bombarded Si and GaAs at 1.0 to 2.0 MeV (Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1973), by L. F. Lowe, L. J. Eyges, M. L. Deane, D. E. Davies, J. K. Kennedy, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• Research on improved solar generator (Wright-Patterson Air Force Base, Ohio : Flight Accessories Laboratory, Aeronautical Systems Division, Air Force Systems Command, United States Air Force, 1963., 1963), by K. S. Tarneja, United States. Air Force. Systems Command. Aeronautical Systems Division, and Westinghouse Electric Corporation (page images at HathiTrust)
• Semiconductor diode performance in nuclear radiation environments (Wright-Patterson Air Force Base, Ohio : Aeronautical Systems Division, Air Force Systems Command, United States Air Force, 1962., 1962), by Harlan G. Hamre, William N. McElroy, Raymond C. Barrell, Wright-Patterson Air Force Base (Ohio), Armour Research Foundation (U.S.), and United States. Air Force. Systems Command. Aeronautical Systems Division (page images at HathiTrust)
• The analysis of optical surface scattering from epitaxial films (Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1973), by Richard N. Brown and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• Transient capacitance measurement of deep defect levels in GaAs and Si (Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1976), by J. T. Schott, W. R. White, H. M. DeAngelis, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
• A review of ceramic thin film technology (Wright-Patterson Air Force Base, Ohio : Air Force Materials Laboratory, Directorate of Laboratories, Air Force Systems Command, United States Air Force, 1967., 1967), by Milo Macha, Air Force Materials Laboratory (U.S.), and Inc. Librascope Group General Precision Systems (page images at HathiTrust)
• Research and development for surface protection for silicon devices (Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1963., 1963), by S. S. Flaschen, M. A. Hall, H. W. Cooper, Air Force Cambridge Research Laboratories (U.S.), and Inc. Semiconductor Products Division Motorola (page images at HathiTrust)
• Investigation of new semiconductor phenomenon (Wright-Patterson Air Force Base, Ohio : Biomedical Laboratory, 6570th Aerospace Medical Research Laboratories, Aerospace Medical Division, Air Force Systems Command, 1962., 1962), by James Hanlon, Ohio State University. Research Foundation, and Aerospace Medical Research Laboratories (U.S.) (page images at HathiTrust)

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