| Title: | Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes |
| Author: | Sher, Alvin H. |
| Author: | U.S. Atomic Energy Commission |
| Note: | U.S. Dept. of Commerce, National Bureau of Standards :, 1975 |
| Link: | page images at HathiTrust |
| No stable link: | This is an uncurated book entry from our extended bookshelves, readable online now but without a stable link here. You should not bookmark this page, but you can request that we add this book to our curated collection, which has stable links. |
| Subject: | Diodes au germanium -- Défauts |
| Subject: | Diodes au silicium -- Défauts |
| Subject: | Germanium diodes -- Defects |
| Subject: | Infrared technology |
| Subject: | Silicon diodes -- Defects |
| Other copies: | Look for editions of this book at your library, or elsewhere. |
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