| Title: | Semiconductor measurement technology : results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage : ion implanted dopants in silicon |
| Author: | Albers, John |
| Author: | United States. National Bureau of Standards |
| Note: | U.S. Dept. of Commerce, National Bureau of Standards ;, 1987 |
| Link: | page images at HathiTrust |
| No stable link: | This is an uncurated book entry from our extended bookshelves, readable online now but without a stable link here. You should not bookmark this page, but you can request that we add this book to our curated collection, which has stable links. |
| Subject: | Monte Carlo method |
| Subject: | Particle range (Nuclear physics) -- Mathematical models |
| Subject: | Scattering (Physics) -- Mathematical models |
| Subject: | Semiconductor doping |
| Subject: | Semiconductors -- Measurement |
| Subject: | Silicon |
| Other copies: | Look for editions of this book at your library, or elsewhere. |
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