| Title: | Epitaxial growth of 6H silicon carbide in the temperature range 1320 ̊to 1390 ̊C |
| Author: | Will, Herbert A. |
| Author: | Powell, J. Anthony |
| Author: | Lewis Research Center |
| Note: | National Aeronautics and Space Administration ;, 1974 |
| Link: | page images at HathiTrust |
| No stable link: | This is an uncurated book entry from our extended bookshelves, readable online now but without a stable link here. You should not bookmark this page, but you can request that we add this book to our curated collection, which has stable links. |
| Subject: | Crystal growth |
| Subject: | Epitaxy |
| Subject: | Semiconductors |
| Subject: | Silicon carbide |
| Other copies: | Look for editions of this book at your library, or elsewhere. |
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