| Title: | Surface temperature measurements for ion bombarded Si and GaAs at 1.0 to 2.0 MeV |
| Author: | Lowe, L. F. |
| Author: | Eyges, L. J. |
| Author: | Deane, M. L. |
| Author: | Davies, D. E. |
| Author: | Kennedy, J. K. |
| Author: | Air Force Cambridge Research Laboratories (U.S.) |
| Note: | Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1973 |
| Link: | page images at HathiTrust |
| No stable link: | This is an uncurated book entry from our extended bookshelves, readable online now but without a stable link here. You should not bookmark this page, but you can request that we add this book to our curated collection, which has stable links. |
| Subject: | Gallium arsenides |
| Subject: | Ion bombardment |
| Subject: | Semiconductors |
| Subject: | Silicon |
| Subject: | Surface temperature |
| Subject: | Temperature measurements |
| Other copies: | Look for editions of this book at your library, or elsewhere. |
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