| Title: | The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon |
| Author: | Li, Sheng S., 1938- |
| Author: | National Science Foundation (U.S.) |
| Author: | United States. Defense Advanced Research Projects Agency |
| Note: | U.S. Dept. of Commerce, National Bureau of Standards :, 1978 |
| Link: | page images at HathiTrust |
| No stable link: | This is an uncurated book entry from our extended bookshelves, readable online now but without a stable link here. You should not bookmark this page, but you can request that we add this book to our curated collection, which has stable links. |
| Subject: | Holes (Electron deficiencies) |
| Subject: | Semi-conducteurs -- Dopage |
| Subject: | Semiconductor doping |
| Subject: | Silicon -- Défauts |
| Subject: | Silicon -- Defects |
| Subject: | Trous (Électronique) |
| Other copies: | Look for editions of this book at your library, or elsewhere. |
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