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1. Integrated Circuits Based on Bilayer MoS2 Transistors 2012

   https://ncsu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwhV1LT8MwDLZgXODAWzAeUxFcqzVJn9I0iU1McEAcBucqT20S6tC68ftx0pV1h8Gpl6SRa6f-HDufAR7CSDNGNPdVmEg_FIz5XNHYF0kqmJRUC643D3PgfksGn5Ju8ckQ0pDoexf2qA2pLP4ZjtfMusy1YcWdi3FQloY1fVBzqnU9srR1j7xE0U3Vs2I7qHTOZXQEb_UVHVdTYjsZNIvru47Q0LFYNMgb_xLhGA5XONN7rAzjBHZ0cQoHDfbBM-j1Jv2Xmi1CecPpXC6ni7LXnfS9ATo35c0KbzD95IjKvdfZmHrOsTlekfIcPkZP78Nnf9VMwec0Tha-wdhF8UwYmSYmJkrRzPolRAvGHv5ExhBJZaICTVSKqCRQkYyF4CrkRiMsYZfgKUUUDbiRjKdhiNrUacIFE5FiOpUsakMHP3O-2gVl7hLclOS_8uOADQ3kXxWlRm4pcRDpBW24q1WSo53b5AUv9Gxp38UyFsb4a27DRaWr9WyKcVlK2NV_61_DPj6p71pA3EBrMV_qW2hZhXacVf0AJTXHGA

   Wang, Han; Yu, Lili; Lee, Yi-Hsien; Shi, Yumeng; Hsu, Allen; Chin, Matthew L...

   Nano Letters, Vol. 12, Issue 9, pp. 4674 - 4680.

   Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome ... Read more

   Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene’s advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions. Read less

   Journal Article  |  Full Text Online

2. Monolithic Silicon Photonic Integrated Circuits for Compact 100 ^Gb/s Coherent Optical Receivers... 2014

   https://ncsu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3faxQxEB5soWAf1LZCT2uJ4JtuN5tkLwmUgpRWfVJRoU8uySTLLehd6e2Bf76T3O7Rgz70bWHD_shMkm-Sb74BeKfqKGUVXRGUxkJ5KQsXxLTw2niJKKJ3cXszBz5scmFijJl8Fs_SZT7LDwtcpa2ycqpTPEAB-o7hQ67WZtY1yqyVB7QuCKPfjAky3Jbk4t-vEotLnqXi1ZWpthahXFVleyoWw_py_Rxuxi_LtJJUzOA-v77MmoZZyGLUb3zsX7yAZwPmZB_XTnIAT-L8EPbvKREewl5mguLyCP7RKE-cuFmH7Ef3hxxlzr7NFn2S0GXns4svo75EYJfdHa66fnlezi4YgV-WJxfsWcU5-_3Jl0uWsj-S_hP7eps3zRnB1JipIMzNA8sr5d8uS3y-hF_XVz8vPxdDeYYCpTB9gby1KBAND1bVoY1CBEcIqqaIytgWpylnF5XlwYTgNeEEw531FoNwdSu8PAYWQhUEdy1KZ5Qi_4hGOy99HWQ0KOsJvB8N1dyu5TeaHLZw22SzNsmszWDWCRyl7t60HHp6AiejbZthhC4p5NEm6WdpO4G3m9s0ttKBiZvHxYra1ATgCB9L-erhJ7-Gp_R-tabvnsBuf7eKb2A3ecdpds__x2rmPA

   Po Dong; Xiang Liu; Chandrasekhar, S.; Buhl, Lawrence L.; Aroca, Ricardo...

   Ieee Journal Of Selected Topics In Quantum Electronics, Vol. 20, Issue 4, pp. 150 - 157.

   We present silicon photonic integrated circuits (PICs) based coherent optical transmitters and receivers for high-speed long-distance fiber optical transmission. High-degree photonic integration is... Read more

   We present silicon photonic integrated circuits (PICs) based coherent optical transmitters and receivers for high-speed long-distance fiber optical transmission. High-degree photonic integration is achieved by monolithically integrating silicon electro-optic modulators, germanium photo detectors, silicon nitride-assisted on-chip polarization rotators, thermal phase shifters, and various passive silicon optical devices on a single wafer platform. We demonstrate the use of these PICs for modulating and detecting 112-Gb/s polarization-division-multiplexed quadrature phase-shift keying (PDM-QPSK) and 224-Gb/s PDM 16-ary quadrature amplitude modulation (PDM-16-QAM) signals. Transmission and coherent detection of a 112-Gb/s PDM-QPSK signal over 2560-km standard single-mode fiber is also demonstrated. The high-degree photonic integration for silicon PICs promises small-form-factor and low-power-consumption transceivers for future coherent systems that demand high cost efficiency and energy efficiency. Read less

   Journal Article  |  Full Text Online

3. High‐Yield Ti3C2Tx MXene–MoS2 Integrated Circuits 2022

   https://ncsu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1Lb9NAEF5BeoEDKg-JQkE-9Fa5cXbXLymqFIXSImQuBBFO1r6Mc2hchVoqt_4EJP5hf0lnn0kKBx4Xa-XH2t5vPDszO_4GoQOaKkJGisWS5iKmnJCYSZzFPC84EQIrztSdYE7l_4X5bRb78L-hhX0Arv5V9i_gDZ3CDmgDyLAFmGH7R0DrTI2QsvBFJ6QBAGSKZ1eH1Rw0mT9Gqu4jNhFAQw8hD6eLlegXlskpENH6lAAwZO3DaxP0s1osW6XrLoewwbzX4MxBuL6e-9lPp_H0nZUA6KVlXRCazhqp1coU4Xp_tF76N_J49r1ftt1mBALjjWwOF0okaVxmljHzSDlFirVvagtoek3rwpZWovzpRm-GKekXjW4ZYpk0JFHgn-bEFhq5w5I9eVNNwvH7aAfnZYkHaGdy8u70w5qFOTPFVsMDexbPBA-377DlbwSvhTizY7aLHjl_IZpY3B-je2r5BD3cYJF8isZaAm6ufxjsI4d9ZLC_uf6pUY_G7fEa-MgDPx62x8_Qp7cns-lZ7IpixBeYkCRumCpHEoObm2QqpSxrhGxYwsGSU6WilI-wYBl8fkkpsKCMcn0F2Ikc2g3o8OcokhJ6SFgjCCsoha9SFTnjhKeSqEKQdA_t-7evnaR_q_WafkmKIk32EDYjUl9YQpTaUl_jWo9hHcaw3sLkxb9c9BI9WAvcPhpcrnr1Cg20XnjtsL0Fbu9VRA

   Xu, Xiangming; Guo, Tianchao; Hota, Mrinal K.; Kim, Hyunho; Zheng, Dongxing...

   Advanced Materials (Weinheim), Vol. 34, Issue 48.

   It is very challenging to employ solution‐processed conducting films in large‐area ultrathin nanoelectronics. Here, spray‐coated Ti3C2Tx MXene films as metal contacts are successfully integrated in... Read more

   It is very challenging to employ solution‐processed conducting films in large‐area ultrathin nanoelectronics. Here, spray‐coated Ti3C2Tx MXene films as metal contacts are successfully integrated into sub‐10 nm gate oxide 2D MoS2 transistor circuits. Ti3C2Tx films are spray coated on glass substrates followed by vacuum annealing. Compared to the as‐prepared sample, vacuum annealed films exhibit a higher conductivity (≈11 000 S cm−1) and a lower work function (≈4.5 eV). Besides, the annealed Ti3C2Tx film can be patterned through a standard cleanroom process without peeling off. The annealed Ti3C2Tx film shows a better band alignment for n‐type transport in MoS2 channel with small work function mismatch of 0.06 eV. The MoS2 film can be uniformly transferred on the patterned Ti3C2Tx surface and then readily processed through the cleanroom process. A large‐area array of Ti3C2Tx MXene–MoS2 transistors is fabricated using different dielectric thicknesses and semiconducting channel sizes. High yield and stable performance for these transistor arrays even with an 8 nm‐thick dielectric layer are demonstrated. Besides, several circuits are demonstrated, including rectifiers, negative‐channel metal–oxide–semiconductor (NMOS) inverters, and voltage‐shift NMOS inverters. Overall, this work indicates the tremendous potential for solution‐processed Ti3C2Tx MXene films in large‐area 2D nanoelectronics. Large‐area transistor circuits are successfully fabricated using solution‐processed Ti3C2Tx MXene as source/drain and gate contact electrodes, wafer‐scale MoS2 film as the channel, and an ultrathin HfO2/Al2O3 layer of about 8 nm as the dielectric layer. The high yield and performance uniformity of the device array indicate great potential for Ti3C2Tx MXene in large‐area ultrathin 2D electronics. Read less

   Journal Article  |  Full Text Online

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