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More about Robert C. Marshall:
| | Books by Robert C. Marshall: Books in the extended shelves: Marshall, Robert C.: The conversion of cubic to hexagonal silicon carbide as a function of temperature and pressure (L. G. Hansom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1967., 1967), also by C. E. Ryan, Dennis P. Considine, Irvin Berman, John J. Hawley, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust) Marshall, Robert C.: High pressure, high temperature crystal growth system (L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1967., 1967), also by Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust) Marshall, Robert C.: High temperature furnace system B-208-R (L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1965., 1965), also by John J. Hawley, Dennis P. Considine, Charles E. Ryan, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust) Marshall, Robert C.: The influence of annealing on thin films of beta SiC (L.G. Hanscom Field, Massachusetts : Air Force Cambridge Research Laboratories, Air Force System Command, United States Air Force, 1972, 1972), also by Irvin Berman, James R. Littler, C. E. Ryan, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust) Marshall, Robert C.: New electron beam optics for the preparation of insulating crystals by the floating zone method (L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1966., 1966), also by C. E. Ryan, John J. Hawley, Dennis P. Considine, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust) Marshall, Robert C.: Some factors affecting the growth of beta Silicon carbide (L. G. Hansom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force, 1966., 1966), also by C. E. Ryan, John J. Hawley, Dennis P. Considine, Irvin Berman, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust) Marshall, Robert C.: A unique high-temperature, high-pressure crystal growth system for silicon carbide (L.G. Hanscom Field, Bedfor, Massachusetts : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1973., 1973), also by J. R. Littler, I. Berman, J. J. Hawley, C. E. Ryan, and Air Force Cambridge Research Laboratories (U.S.) (page images at HathiTrust)
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